Switching time of CMOS devices are lower, so that CMOS devices will remain in the active region for lesser time. So the power dissipation will be minimum because power disspipation is maximum when the device is operating in the active region.
In bipolar devices, even if the device is not doing anything, there will be a small base current. Collector current depends on base current and there will be a small collector current, even if the device is not doing anything. This will result in more power dissipation. But in CMOS devices, GATE is insulated and hence there is no flow of current when the device is not doing anything. ie power dissipation will be minimum.
In bipolar devices, even if the device is not doing anything, there will be a small base current. Collector current depends on base current and there will be a small collector current, even if the device is not doing anything. This will result in more power dissipation. But in CMOS devices, GATE is insulated and hence there is no flow of current when the device is not doing anything. ie power dissipation will be minimum.
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